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TSP50N06M

Truesemi
Part Number TSP50N06M
Manufacturer Truesemi
Description N-Channel MOSFET
Published Apr 12, 2017
Detailed Description TSP50N06M / TSF50N06M 60V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced ...
Datasheet PDF File TSP50N06M PDF File

TSP50N06M
TSP50N06M


Overview
TSP50N06M / TSF50N06M 60V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features • 50A, 60V, RDS(on) = 0.
023Ω @VGS = 10 V • Low gate charge ( typical 33nC) • Fast switching • 100% avalanche tested • Improved dv/dt capability {D GDS TO-220 GD S TO-220F ● ◀▲ {G ● ● {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (No...



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