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TSB7N60M

Truesemi
Part Number TSB7N60M
Manufacturer Truesemi
Description N-Channel MOSFET
Published Apr 12, 2017
Detailed Description TSB7N60M/TSI7N60M TSB7N60M/TSI7N60M 600V N-Channel MOSFET General Description Features This Power MOSFET is produced...
Datasheet PDF File TSB7N60M PDF File

TSB7N60M
TSB7N60M

Overview
TSB7N60M/TSI7N60M TSB7N60M/TSI7N60M 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
• 7.
0A,600V,Max.
RDS(on)=1.
3 Ω @ VGS =10V • Low gate charge(typical 29nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability TSB7N60M TSI7N60M ...


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