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TSD60R580WT

Truesemi
Part Number TSD60R580WT
Manufacturer Truesemi
Description N-Channel MOSFET
Published Apr 12, 2017
Detailed Description TSD60R580WT/TSU60R580WT 600V 7A N-Channel SJ-MOSFET TSD60R580WT/TSU60R580WT 600V 7A N-Channel SJ-MOSFET General Descri...
Datasheet PDF File TSD60R580WT PDF File

TSD60R580WT
TSD60R580WT

Overview
TSD60R580WT/TSU60R580WT 600V 7A N-Channel SJ-MOSFET TSD60R580WT/TSU60R580WT 600V 7A N-Channel SJ-MOSFET General Description Features Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.
• 600V @TJ = 25 ℃ • Typ.
RDS(on) = 0.
5Ω • Ultra Low gate charge (typ.
Qg = 14.
5nC) • 100% avalanche tested TSD60R580WT TSU60R580WT TO-252 Absolute Maximum Ratings TO-251 Symbol VDSS ID IDM VGSS EAS IAR EAR Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) Drain Current – Pulsed (Note 1) Gate-Source voltage Single Pulsed Avalanche Energy (Note 2) Av...


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