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TSD630M

Truesemi
Part Number TSD630M
Manufacturer Truesemi
Description N-Channel MOSFET
Published Apr 13, 2017
Detailed Description TSD630M/TSU630M TSD630M/TSU630M 200V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi...
Datasheet PDF File TSD630M PDF File

TSD630M
TSD630M

Overview
TSD630M/TSU630M TSD630M/TSU630M 200V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features • 7.
8A,200V,Max.
RDS(on)=0.
4 Ω @ VGS =10V • Low gate charge(typical 20nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings T...


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