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TSP80R600S1

Truesemi
Part Number TSP80R600S1
Manufacturer Truesemi
Description N-Channel MOSFET
Published Apr 13, 2017
Detailed Description TSP80R600S1 800V 9A N-Channel SJ-MOSFET TSP80R600S1 800V 9A N-Channel SJ-MOSFET General Description Truesemi SJ-FET is...
Datasheet PDF File TSP80R600S1 PDF File

TSP80R600S1
TSP80R600S1

Overview
TSP80R600S1 800V 9A N-Channel SJ-MOSFET TSP80R600S1 800V 9A N-Channel SJ-MOSFET General Description Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.
Features • 850V @TJ = 150 ℃ • Typ.
RDS(on) = 0.
55Ω • Ultra Low gate charge (typ.
Qg = 35nC) • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current – Pulsed (Note 1) Gate-Source voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Av...


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