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TSU60R2K3S1

Truesemi
Part Number TSU60R2K3S1
Manufacturer Truesemi
Description N-Channel MOSFET
Published Apr 13, 2017
Detailed Description TSD60R2K3S1/TSU60R2K3S1 600V 2.3A N-Channel SJ-MOSFET TSD60R2K3S1/TSU60R2K3S1 600V 2.3A N-Channel SJ-MOSFET General De...
Datasheet PDF File TSU60R2K3S1 PDF File

TSU60R2K3S1
TSU60R2K3S1

Overview
TSD60R2K3S1/TSU60R2K3S1 600V 2.
3A N-Channel SJ-MOSFET TSD60R2K3S1/TSU60R2K3S1 600V 2.
3A N-Channel SJ-MOSFET General Description Features Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.
• 650V @TJ = 150 ℃ • Typ.
RDS(on) = 1.
9Ω • Ultra Low gate charge (typ.
Qg = 7nC) • 100% avalanche tested TSD60R2K3S1 TSU60R2K3S1 TO-252 Absolute Maximum Ratings TO-251 Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current – Pulsed (Note 1) Gate-Source voltage Single Pu...


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