DatasheetsPDF.com

TSI4N60M

Part Number	TSI4N60M
Manufacturer	Truesemi
Description	N-Channel MOSFET
Published	Apr 13, 2017
Detailed Description	TSB4N60M / TSI4N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced p...
Datasheet	TSI4N60M PDF File

Overview

TSB4N60M / TSI4N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features • 4.
0A, 600V, RDS(on) = 2.
6 @VGS = 10 V • Low gate charge ( typical 16nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Abs...

Similar Datasheet

TSI4N60M N-Channel MOSFET - Truesemi

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)