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SSM3310GJ

Part Number	SSM3310GJ
Manufacturer	Silicon Standard
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Apr 13, 2017
Detailed Description	SSM3310GH,J P-channel Enhancement-mode Power MOSFET 2.5V low gate drive capability Simple drive requirement Fast switch...
Datasheet	SSM3310GJ PDF File

Overview

SSM3310GH,J P-channel Enhancement-mode Power MOSFET 2.
5V low gate drive capability Simple drive requirement Fast switching Pb-free; RoHS compliant.
DESCRIPTION G D S The SSM3310GH is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited for use in low voltage battery applications.
The through-hole version, the SSM3310GJ in TO-251, is available for low-footprint vertical mounting.
These devices are manufactured with an advanced process, providing improved on-resistance and switching performance.
BV DSS R DS(ON) ID -20V 150mΩ -10A G D S TO-252 (H) G D S TO-251 (J) ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID @ TC=25°C ID...

Similar Datasheet

SSM3310GH P-CHANNEL ENHANCEMENT MODE POWER MOSFET - Silicon Standard
SSM3310GJ P-CHANNEL ENHANCEMENT MODE POWER MOSFET - Silicon Standard

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