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SSM7002EGU

Part Number	SSM7002EGU
Manufacturer	Silicon Standard
Description	N-channel Enhancement-mode Power MOSFET
Published	Apr 13, 2017
Detailed Description	SSM7002EGU N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID 50V 3Ω 250mA Pb-free; RoHS-comp...
Datasheet	SSM7002EGU PDF File

Overview

SSM7002EGU N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID 50V 3Ω 250mA Pb-free; RoHS-compliant SOT-323 D DESCRIPTION The SSM7002EGU acheives fast switching performance with low gate charge without a complex drive circuit.
It is suitable for low voltage applications such as small converters and general load-switching circuits.
The SSM7002EGU is supplied in a RoHS-compliant SOT-323 package, which is widely used for low-power commercial and industrial surface mount applications where a small footprint is required.
S SOT-323 G ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID ISD IDM PD TSTG TJ Parameter Drain-source voltage Gate-source voltage Continuous drain current 3, T A = 25°C Source-drain diode current Pulsed drain current 1,2 Total power dissipation 3, TA = 25°C TA = 75°C Storage temperature range Operating junction temperature range THERMAL CHARACTERISTICS Symbol RΘJA Parameter Maximum thermal resistance, junction-ambient3 Value 50 ± 20 250...

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SSM7002EGU N-channel Enhancement-mode Power MOSFET - Silicon Standard

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