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SSM2310GN

Silicon Standard
Part Number SSM2310GN
Manufacturer Silicon Standard
Description N-channel Enhancement-mode Power MOSFET
Published Apr 13, 2017
Detailed Description SSM2310GN N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID 60V 90mΩ 3A Pb-free; RoHS-compli...
Datasheet PDF File SSM2310GN PDF File

SSM2310GN
SSM2310GN


Overview
SSM2310GN N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID 60V 90mΩ 3A Pb-free; RoHS-compliant SOT-23-3 D DESCRIPTION The SSM2310GN acheives fast switching performance with low gate charge without a complex drive circuit.
It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits.
The SSM2310GN is supplied in an RoHS-compliant SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications.
S SOT-23-3 G ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-source voltage Gate-source voltage Continuous drain current 3, T A = 25°C Pulsed drain current 1,2 TA = 70°C Total power dissipation 3, TA = 25°C Linear derating factor Storage temperature range Operating junction temperature range THERMAL CHARACTERISTICS Symbol RΘJA Parameter Maximum thermal resistance, junction-ambient3 Value 60 ± 20 3 2.
3 10 1.
38 0.
01 -55 to 150 -55 to...



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