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SSM2312GN

Part Number	SSM2312GN
Manufacturer	Silicon Standard
Description	N-channel Enhancement-mode Power MOSFET
Published	Apr 13, 2017
Detailed Description	SSM2312GN N-channel Enhancement-mode Power MOSFET Low gate-charge Simple drive requirement Fast switching Pb-free; RoHS...
Datasheet	SSM2312GN PDF File

Overview

SSM2312GN N-channel Enhancement-mode Power MOSFET Low gate-charge Simple drive requirement Fast switching Pb-free; RoHS compliant.
DESCRIPTION D G S BV DSS R DS(ON) ID D The SSM2312GN is in a SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications.
This device is suitable for low-voltage applications such as DC/DC converters and and general switching applications.
SOT-23-3 20V 50mΩ 4.
3A S G ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range THERMAL DATA Symbol RΘJA Parameter Maximum Thermal Resistance, Junction-ambient3 Rating 20 ± 12 4.
3 3.
4 10 1.
38 0.
01 -55 to 150 -55 to 150 Value 90 Units V V A A A W W/°C °C °C Unit °C/W 4/16/2005 Rev...

Similar Datasheet

SSM2312GN N-channel Enhancement-mode Power MOSFET - Silicon Standard

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