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SSM9980M

Part Number	SSM9980M
Manufacturer	Silicon Standard
Description	Dual N-channel Enhancement-mode Power MOSFET
Published	Apr 13, 2017
Detailed Description	SSM9980M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Lower gate charge Fast switching cha...
Datasheet	SSM9980M PDF File

Overview

SSM9980M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Lower gate charge Fast switching characteristics Description D2 D2 D1 D1 SO-8 G2 S2 G1 S1 Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
BV DSS R DS(ON) ID 80V 52mΩ 4.
6A D1 G1 G2 D2 The SSM9980M is in the SO-8 package, which is widely preferred for S1 S2 commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters.
This device is available with Pb-free lead finish (second-level interconnect) as SSM9980GM.
Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TA=25°C ID @ TA=100°C IDM PD @ TA=25°C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature R...

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