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HFI10N60U

Part Number	HFI10N60U
Manufacturer	SemiHow
Description	N-Channel MOSFET
Published	Apr 14, 2017
Detailed Description	HFW10N60U_HFI10N60U HFW10N60U / HFI10N60U 600V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche ...
Datasheet	HFI10N60U PDF File

Overview

HFW10N60U_HFI10N60U HFW10N60U / HFI10N60U 600V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) ȍ7\S#9GS=10V 100% Avalanche Tested March 2013 BVDSS = 600 V RDS(on) typ ȍ ID = 9.
5 A D2-PAK I2-PAK HFW10N60U HFI10N60U 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC ...

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HFI10N60U N-Channel MOSFET - SemiHow

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