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GA50JT06-258

GeneSiC
Part Number GA50JT06-258
Manufacturer GeneSiC
Description Junction Transistor
Published Apr 14, 2017
Detailed Description GA50JT06-258 Normally – OFF Silicon Carbide Junction Transistor Features  225°C maximum operating temperature  Gate O...
Datasheet PDF File GA50JT06-258 PDF File

GA50JT06-258
GA50JT06-258

Overview
GA50JT06-258 Normally – OFF Silicon Carbide Junction Transistor Features  225°C maximum operating temperature  Gate Oxide Free SiC Switch  Exceptional Safe Operating Area  Excellent Gain Linearity  Compatible with 5 V TTL Gate Drive  Temperature Independent Switching Performance  Low Output Capacitance  Positive Temperature Coefficient of RDS,ON  Suitable for Connecting an Anti-parallel Diode Advantages  Compatible with Si MOSFET/IGBT Gate Drive ICs  > 20 µs Short-Circuit Withstand Capability  Lowest-in-class Conduction Losses  High Circuit Efficiency  Minimal Input Signal Distortion  High Amplifier Bandwidth Package D TO-258 VDS RDS(ON) ID (Tc = 25°C) hFE (Tc = 25°C) = = ...


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