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TC1601

TRANSCOM
Part Number TC1601
Manufacturer TRANSCOM
Description 2W High Linearity and High Efficiency GaAs Power FETs
Published Apr 19, 2017
Detailed Description TC1601 REV4_20060510 2W High Linearity and High Efficiency GaAs Power FETs FEATURES ! 2W Typical Power at 6 GHz PHOT...
Datasheet PDF File TC1601 PDF File

TC1601
TC1601


Overview
TC1601 REV4_20060510 2W High Linearity and High Efficiency GaAs Power FETs FEATURES ! 2W Typical Power at 6 GHz PHOTO ENLARGEMENT ! Linear Power Gain: GL = 12 dB Typical at 6 GHz ! High Linearity: IP3 = 43 dBm Typical at 6 GHz ! Via Holes Source Ground ! Suitable for High Reliability Application ! Breakdown Voltage: BVDGO ≥ 15 V ! Lg = 0.
35 µm, Wg = 5 mm ! High Power Added Efficiency: PAE ≥ 43 % for Class A Operation ! Lg = 0.
35 µm, Wg = 5 mm ! Tight Vp ranges control ! High RF input power handling capability ! 100 % DC Tested DESCRIPTION The TC1601 is a Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power FET, Which has high linearity and high Power Added Efficiency.
The device is processed with a propriety via-hole process, which provides low thermal resistance and low inductance.
The short gate length enables the device to be used in circuits up to 20 GHz.
All devices are 100 % DC tested to assure consistent quality.
Bond pads are gold plated ...


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