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SW9N90

SEMIPOWER
Part Number SW9N90
Manufacturer SEMIPOWER
Description MOSFET
Published Apr 20, 2017
Detailed Description SAMWIN SW9N90 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 1.45 Ω)@VGS=10V ■ Gate Charge (Typ 60nC) ■ I...
Datasheet PDF File SW9N90 PDF File

SW9N90
SW9N90

Overview
SAMWIN SW9N90 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 1.
45 Ω)@VGS=10V ■ Gate Charge (Typ 60nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-3P 12 3 1.
Gate 2.
Drain 3.
Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.
BVDSS : 900V ID : 9.
0A RDS(ON) : 1.
45ohm 2 1 3 Absolute maximum...


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