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SVS47N60PN

Part Number	SVS47N60PN
Manufacturer	Silan Microelectronics
Description	600V DP MOS POWER TRANSISTOR
Published	Apr 21, 2017
Detailed Description	SVS47N60PN_Datasheet 47A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS47N60PN is an N-channel enhancement mode...
Datasheet	SVS47N60PN PDF File

Overview

SVS47N60PN_Datasheet 47A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS47N60PN is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology.
It achieves low conduction loss and switching losses.
It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.
Furthermore, it’s universal applicable, i.
e.
, suitable for hard and soft switching topologies.
2 1 3 1.
Gate 2.
Drain 3.
Source FEATURES  47A, 600V, RDS(on)(typ.
)=55m@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Periodic avalanche rated  Extreme dv/dt rated  High peak current capability 1 23 TO-3P ORDERING INFORMATION Part No.
SVS47N60PN Package TO-3P Marking 47N60 Hazardous Substance Control Pb free Packing Tube ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed TC=25°C TC=100°C Power Dissipation(TC=25C) -Derate above 25C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD EAS TJ Tstg Ratings 600 ±30 47 30 188 415 3.
32 2103 -55～+150 -55～+150 Unit V V A A W W/C mJ C C HANGZHOU SILAN MICROELECTRONICS CO.
,LTD http: //www.
silan.
com.
cn Rev.
:1.
6 Page 1 of 7 SVS47N60PN_Datasheet THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Ratings 0.
3 50 ELECTRICAL CHARACTERISTICS (TC=25C unless otherwise noted) Characteristics Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain-Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Symbol Test conditions...

Similar Datasheet

SVS47N60PN 600V DP MOS POWER TRANSISTOR - Silan Microelectronics

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