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CBSL100

Advanced Semiconductor
Part Number CBSL100
Manufacturer Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
Published Mar 23, 2005
Detailed Description CBSL100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL100 is Designed for PACKAGE STYLE .400 BAL FLG (C) .0...
Datasheet PDF File CBSL100 PDF File

CBSL100
CBSL100

Overview
CBSL100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL100 is Designed for PACKAGE STYLE .
400 BAL FLG (C) .
080x45° A B FULL R (4X).
060 R E D C .
1925 F H I N L G M FEATURES: • Input Matching Network • • Omnigold™ Metalization System MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 25 A 60 V 30 V 3.
0 V 310 W @ TC = 25 C -65 OC to +200 OC -65 OC to +150 OC 0.
6 OC/W O DIM A B C D E F G H I J K L M N .
395 / 10.
03 .
850 / 21.
59 1.
335 / 33.
91 .
003 / 0.
08 .
060 / 1.
52 .
082 / 2.
08 .
120 / 3.
05 .
380 / 9.
65 .
780 / 19.
81 .
435 / 11.
05 1.
090 / 27.
69 MINIMUM inches / mm J K MAXIMUM inches / mm .
220 / 5.
59 .
210 / 5.
33 .
230 / 5.
84 .
130 / 3.
30 .
390 / 9.
91 .
820 / 20.
83 1.
345 / 34.
16 .
007 / 0.
18 .
070 / 1.
78 .
100 / 2.
54 .
205 / 5.
21 .
407 / 10.
34 .
870 / 22.
10 ORDER CODE: ASI10585 CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICES hFE PG IMD ηC TC = 25 C O NONETEST CONDITIONS IC = 100 mA IC = 100 mA IE = 50 mA VCE = 28 V VCE = 5.
0 V VCE = 24 V POUT = 100 W IC = 3.
0 A ICQ = 2 X 100 mA f = 960 MHz MINIMUM TYPICAL MAXIMUM 60 30 3.
0 10 15 9.
0 -32 45 70 UNITS V V V mA --dB dBc % A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice.
REV.
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