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NGTB20N120IHRWG

ON Semiconductor
Part Number NGTB20N120IHRWG
Manufacturer ON Semiconductor
Description IGBT
Published Apr 29, 2017
Detailed Description NGTB20N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robus...
Datasheet PDF File NGTB20N120IHRWG PDF File

NGTB20N120IHRWG
NGTB20N120IHRWG

Overview
NGTB20N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers low on−state voltage with minimal switching loss.
The IGBT is well suited for resonant or soft switching applications.
Features • Extremely Efficient Trench with Fieldstop Technology • Low Switching Loss Reduces System Power Dissipation • Optimized for Low Losses in IH Cooker Application • Reliable and Cost Effective Single Die Solution • These are Pb−Free Devices Typical Applications • Inductive Heating • Consumer Appliances • Soft S...


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