DatasheetsPDF.com

TK150E09NE

Toshiba Semiconductor
Part Number TK150E09NE
Manufacturer Toshiba Semiconductor
Description MOSFET
Published Apr 29, 2017
Detailed Description TK150E09NE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSⅧ-H) TK150E09NE  E-Bike  Low drain−sour...
Datasheet PDF File TK150E09NE PDF File

TK150E09NE
TK150E09NE

Overview
TK150E09NE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSⅧ-H) TK150E09NE  E-Bike  Low drain−source ON resistance : RDS (ON) = 3.
6 mΩ (typ.
) (VGS = 10 V)  Low leakage current : IDSS = 10 μA (max) (VDS = 85 V)  Enhancement mode : Vth = 2.
5~4.
5 V (VDS = 10 V, ID = 1.
0 mA) 10.
2±0.
3 Φ3.
7±0.
1 A 2.
74 6.
51 Unit: mm 1.
27±0.
1 8.
59±0.
2 15.
1±0.
8 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Gate−source voltage Drain current DC (Tc = 25°C) (Note 1) DC (Tc = 100°C) (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current (Note 2) Peak diode recovery dv/dt (Note 5) Channel ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)