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WNMD2167

Part Number	WNMD2167
Manufacturer	Will Semiconductor
Description	Dual N-Channel MOSFET
Published	Apr 30, 2017
Detailed Description	WNMD2167 Dual N-Channel, 20V, 6.3A, Power MOSFET VDS (V) 20 Typical Rds(on) (Ω) 0.016@ VGS=4.5V 0.018@ VGS=3.1V 0.020...
Datasheet	WNMD2167 PDF File

Overview

WNMD2167 Dual N-Channel, 20V, 6.
3A, Power MOSFET VDS (V) 20 Typical Rds(on) (Ω) 0.
016@ VGS=4.
5V 0.
018@ VGS=3.
1V 0.
020@ VGS=2.
5V Descriptions The WNMD2167 is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2167 is Pb-free.
WNMD2167 Http//:www.
willsemi.
com SOT-23-6L Features  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package SOT-23-6L Applications  Driver for Relay, Solenoid, Motor, L...

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