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WSB5557Z

WillSEMI
Part Number WSB5557Z
Manufacturer WillSEMI
Description Schottky Barrier Diode
Published Apr 30, 2017
Detailed Description WSB5557Z Schottky Barrier Diode Features  100mA Average rectified forward current  Low forward voltage  Ultra-low lea...
Datasheet PDF File WSB5557Z PDF File

WSB5557Z
WSB5557Z

Overview
WSB5557Z Schottky Barrier Diode Features  100mA Average rectified forward current  Low forward voltage  Ultra-low leakage current  Small package DFN0603-2L Applications  Low Current rectification Absolute maximum ratings Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Peak forward surge current (8.
3ms single sine pluse) Junction temperature Operating temperature Storage temperature WSB5557Z Http://www.
sh-willsemi.
com DFN0603-2L(Bottom View) Circuit Symbol VRM VR IO IFSM TJ Topr Tstg Marking Value 30 30 100 2 150 -40 ~ 150 -40 ~ 150 Unit V V mA A OC OC OC Electronics characteristics (TA=25oC) Parameter Symbol Condition Reverse...


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