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BAS16WT1G

ON Semiconductor
Part Number BAS16WT1G
Manufacturer ON Semiconductor
Description Silicon Switching Diode
Published May 1, 2017
Detailed Description BAS16WT1G Silicon Switching Diode Features • S and NSV Prefix for Automotive and Other Applications Requiring Unique Sit...
Datasheet PDF File BAS16WT1G PDF File

BAS16WT1G
BAS16WT1G

Overview
BAS16WT1G Silicon Switching Diode Features • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.
com 3 CATHODE 1 ANODE MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 ms VR IR IFM(surge) 100 200 500 V mA mA Total Power Dissipation, One Diode Loaded TA = 25°C Derate above 25°C Mounted on a Ceramic Substrate (10 x 8 x 0.
6 mm) PD 200 mW 1.
6 mW/°C Operating and Storage Junction Temperature Range T...


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