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NSVMMBD352WT1G

Part Number	NSVMMBD352WT1G
Manufacturer	ON Semiconductor
Description	Dual Schottky Barrier Diode
Published	May 1, 2017
Detailed Description	MMBD352WT1G, NSVMMBD352WT1G Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications...
Datasheet	NSVMMBD352WT1G PDF File

Overview

MMBD352WT1G, NSVMMBD352WT1G Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits.
Features  Very Low Capacitance − Less Than 1.
0 pF @ 0 V  Low Forward Voltage − 0.
5 V (Typ) @ IF = 10 mA  AEC Qualified and PPAP Capable  NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 7.
0 VCC Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings onl...

Similar Datasheet

NSVMMBD352WT1G Dual Schottky Barrier Diode - ON Semiconductor

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