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BAS21HT3G

ON Semiconductor
Part Number BAS21HT3G
Manufacturer ON Semiconductor
Description High Voltage Switching Diode
Published May 1, 2017
Detailed Description BAS21HT1G, BAS21HT3G, NSVBAS21HT1G, NSVBAS21HT3G High Voltage Switching Diode Features • NSV Prefix for Automotive and...
Datasheet PDF File BAS21HT3G PDF File

BAS21HT3G
BAS21HT3G

Overview
BAS21HT1G, BAS21HT3G, NSVBAS21HT1G, NSVBAS21HT3G High Voltage Switching Diode Features • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These are Pb−Free Devices MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage Repetitive Peak Reverse Voltage Peak Forward Current Repetitive Peak Forward Current Non−Repetitive Peak Forward Surge Current, 60 Hz VR VRRM IF IFRM IFSM(surge) 250 250 200 500 625 Vdc Vdc mAdc mA mAdc Non−Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) IFSM A t = 1 ms 20 t = 10 ms 20 t = 100 ms 10 t = 1 ms 4 t=1s 1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C PD 200 mW 1.
57 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 635 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C S...


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