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QM2608N8

UBIQ
Part Number QM2608N8
Manufacturer UBIQ
Description MOSFETs
Published May 2, 2017
Detailed Description QM2608N8 N-Ch and P-Ch Fast Switching MOSFETs General Description The QM2608N8 is the highest performance trench N-ch a...
Datasheet PDF File QM2608N8 PDF File

QM2608N8
QM2608N8

Overview
QM2608N8 N-Ch and P-Ch Fast Switching MOSFETs General Description The QM2608N8 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications.
The QM2608N8 meet the RoHS and Green Product requirement with full function reliability approved.
Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Product Summery BVDSS 20V -20V RDSON 48mΩ 70mΩ ID 3.
8A -3.
4A Applications z High Frequency Point-of-Load Synchronous s Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch DFN3X2 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Thermal Data Symbol RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.
5V1 Continuous Drain Current, VG...


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