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MBM29DL800TA-70

Fujitsu
Part Number MBM29DL800TA-70
Manufacturer Fujitsu
Description 8M (1M x 8/512K x 16) BIT FLASH MEMORY
Published May 6, 2017
Detailed Description FUJITSU SEMICONDUCTOR DATA SHEET DS05-20860-3E FLASH MEMORY CMOS 8M (1M × 8/512K × 16) BIT MBM29DL800TA-70/-90/-12/MB...
Datasheet PDF File MBM29DL800TA-70 PDF File

MBM29DL800TA-70
MBM29DL800TA-70

Overview
FUJITSU SEMICONDUCTOR DATA SHEET DS05-20860-3E FLASH MEMORY CMOS 8M (1M × 8/512K × 16) BIT MBM29DL800TA-70/-90/-12/MBM29DL800BA-70/-90/-12 s FEATURES • Single 3.
0 V read, program, and erase Minimizes system level power requirements • Simultaneous operations Read-while-Erase or Read-while-Program • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts (Pin compatible with MBM29LV800TA/BA) 48-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type) 48-ball FBGA (Package suffix: PBT) • Minimum 100,000 program/erase cycles • High performance 70 ns maximum access time • Sector erase architecture Two 16K byte, four 8K bytes, two 32K byte, and fourteen 64K bytes.
Any combination of sectors can be concurrently erased.
Also supports full chip erase.
• Boot Code Sector Architecture T = Top sector B = Bottom sector • Embedded EraseTM Algorithms Automatically pre-programs...


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