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CP317V

Part Number	CP317V
Manufacturer	Central Semiconductor
Description	Small Signal Transistor
Published	May 8, 2017
Detailed Description	PROCESS CP317V Small Signal Transistor NPN - RF Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bon...
Datasheet	CP317V PDF File

Overview

PROCESS CP317V Small Signal Transistor NPN - RF Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY EPITAXIAL PLANAR 14.
5 x 14.
5 MILS 7.
1 MILS 2.
4 x 2.
2 MILS 2.
4 x 2.
2 MILS Al - 30,000Å Au - 18,000Å GROSS DIE PER 4 INCH WAFER 53,788 PRINCIPAL DEVICE TYPES CMPT918 2N918 2N2857 2N5179 2N5770 BFY90 PN3563 PN3564 w w w.
c e n t r a l s e m i .
c o m R0 (30-August 2011) PROCESS CP317V Typical Electrical Characteristics w w w.
c e n t r a l s e m i .
c o m R0 (30-August 2011) ...

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