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BF493S

Part Number	BF493S
Manufacturer	ON Semiconductor
Description	High Voltage Transistor
Published	May 11, 2017
Detailed Description	BF493S High Voltage Transistor PNP Silicon Features • This is a Pb−Free Device* MAXIMUM RATINGS Rating Collector −Emitt...
Datasheet	BF493S PDF File

Overview

BF493S High Voltage Transistor PNP Silicon Features • This is a Pb−Free Device* MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above = 25°C Symbol VCEO VCBO VEBO IC PD Value −350 −350 −6.
0 −500 625 5.
0 Unit Vdc Vdc Vdc mAdc mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.
5 W 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.
3 °C/W Stresses exceedin...

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