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P2N2907A

ON Semiconductor
Part Number P2N2907A
Manufacturer ON Semiconductor
Description Amplifier Transistor
Published May 11, 2017
Detailed Description P2N2907A Amplifier Transistor PNP Silicon Features • These are Pb--Free Devices* MAXIMUM RATINGS Rating Collector--Emi...
Datasheet PDF File P2N2907A PDF File

P2N2907A
P2N2907A

Overview
P2N2907A Amplifier Transistor PNP Silicon Features • These are Pb--Free Devices* MAXIMUM RATINGS Rating Collector--Emitter Voltage Collector--Base Voltage Emitter--Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Symbol VCEO VCBO VEBO IC PD Value --60 --60 --5.
0 --600 625 5.
0 Unit Vdc Vdc Vdc mAdc mW mW/°C Total Device Dissipation @ TC = 25°C PD 1.
5 W Derate above 25°C 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg --55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RθJA 200 °C/W Thermal Resistance, Junction to Case RθJC 83.
3 °C/W Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
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