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MMBD101LT1G

ON Semiconductor
Part Number MMBD101LT1G
Manufacturer ON Semiconductor
Description Schottky Barrier Diodes
Published May 12, 2017
Detailed Description MBD101G, MMBD101LT1G Schottky Barrier Diodes Designed primarily for UHF mixer applications but suitable also for use in...
Datasheet PDF File MMBD101LT1G PDF File

MMBD101LT1G
MMBD101LT1G

Overview
MBD101G, MMBD101LT1G Schottky Barrier Diodes Designed primarily for UHF mixer applications but suitable also for use in detector and ultra−fast switching circuits.
Supplied in an inexpensive plastic package for low−cost, high−volume consumer requirements.
Also available in Surface Mount package.
Features • Low Noise Figure − 6.
0 dB Typ @ 1.
0 GHz • Very Low Capacitance − Less Than 1.
0 pF • High Forward Conductance − 0.
5 V (Typ) @ IF = 10 mA • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Reverse Voltage VR Forward Power Dissipation TA = 25°C MBD101 MMBD101LT1 PF Value 7.
0 280 225 Unit V mW Derate above 25°C MBD101 MMBD101LT1 2.
2 mW/°C 1.
8 Junction Temperature TJ +150 °C Storage Temperature Range Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and relia...


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