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MMBD7000LT1G

ON Semiconductor
Part Number MMBD7000LT1G
Manufacturer ON Semiconductor
Description Dual Switching Diode
Published May 12, 2017
Detailed Description MMBD7000LT1G, SMMBD7000LT1G, MMBD7000LT3G, SMMBD7000LT3G Dual Switching Diode Features • S Prefix for Automotive and Ot...
Datasheet PDF File MMBD7000LT1G PDF File

MMBD7000LT1G
MMBD7000LT1G

Overview
MMBD7000LT1G, SMMBD7000LT1G, MMBD7000LT3G, SMMBD7000LT3G Dual Switching Diode Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc Peak Forward Surge Current IFM(surge) 500 mAdc Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1)TA = 25°C Derate above 25°C PD 225 mW 1.
8 mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C P...


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