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MJE172

Inchange Semiconductor
Part Number MJE172
Manufacturer Inchange Semiconductor
Description Silicon PNP Power Transistors
Published May 16, 2017
Detailed Description INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification MJE172 DESCRIPTION ·Collector–Emitte...
Datasheet PDF File MJE172 PDF File

MJE172
MJE172

Overview
INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification MJE172 DESCRIPTION ·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = -80 V ·DC Current Gain— : hFE = 30(Min) @ IC= -0.
5 A = 12(Min) @ IC= -1.
5 A ·Complement to the NPN MJE182 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low power audio amplifier ·Low current high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-peak -6 A IB Base Current Collector Power Dissipation PC Ta=25℃ Collector Power Dissipation TC=25℃ Ti Junction Temperature -1 A 1.
5 W 12.
5 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 10 ℃/W Rth j-a...


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