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1N5830

GeneSiC
Part Number 1N5830
Manufacturer GeneSiC
Description Silicon Power Schottky Diode
Published Jun 5, 2017
Detailed Description Silicon Power Schottky Diode Features • High Surge Capability • Types up to 40V VRRM • Not ESD Sensitive Note: 1. Standa...
Datasheet PDF File 1N5830 PDF File

1N5830
1N5830

Overview
Silicon Power Schottky Diode Features • High Surge Capability • Types up to 40V VRRM • Not ESD Sensitive Note: 1.
Standard polarity: Stud is cathode.
2.
Reverse polarity (R): Stud is anode.
3.
Stud is base.
1N5829 thru 1N5831R VRRM = 20 V - 40 V IF = 25 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N5829 (R) 1N5830 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 100 °C TC = 25 °C, tp = 8.
3 ms 20 14 20 25 800 -55 to 150 -55 to 150 25 17 25 25 800 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N5829 (R) Diode forward voltage Reverse current Thermal characteristics Thermal resistance, junction case VF IF = 25 A, T...


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