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1N5832

Part Number	1N5832
Manufacturer	GeneSiC
Description	Silicon Power Schottky Diode
Published	Jun 5, 2017
Detailed Description	Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40V VRRM • Not ESD Sensitive Note: 1....
Datasheet	1N5832 PDF File

Overview

Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40V VRRM • Not ESD Sensitive Note: 1.
Standard polarity: Stud is cathode.
2.
Reverse polarity (R): Stud is anode.
3.
Stud is base.
1N5832 thru 1N5834R VRRM = 20 V - 40 V IF(AV) = 40 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N5832 (R) 1N5833 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 20 14 20 -55 to 150 -55 to 150 30 21 30 -55 to 150 -55 to 150 1N5834 (R) 40 28 40 -55 to 150 -55 to 150 Electrical characteristi...

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