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1N5834

GeneSiC
Part Number 1N5834
Manufacturer GeneSiC
Description Silicon Power Schottky Diode
Published Jun 5, 2017
Detailed Description Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40V VRRM • Not ESD Sensitive Note: 1....
Datasheet PDF File 1N5834 PDF File

1N5834
1N5834

Overview
Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40V VRRM • Not ESD Sensitive Note: 1.
Standard polarity: Stud is cathode.
2.
Reverse polarity (R): Stud is anode.
3.
Stud is base.
1N5832 thru 1N5834R VRRM = 20 V - 40 V IF(AV) = 40 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N5832 (R) 1N5833 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 20 14 20 -55 to 150 -55 to 150 30 21 30 -55 to 150 -55 to 150 1N5834 (R) 40 28 40 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N5832 (R) Average forward current (per pkg) IF(AV) Peak forward surge current (per leg) IFSM Maximum instantaneous forward voltage (per leg) VF Maximum instantaneous reverse current at rated DC blocking vol...


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