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MBR3530R

GeneSiC
Part Number MBR3530R
Manufacturer GeneSiC
Description Silicon Power Schottky Diode
Published Jun 8, 2017
Detailed Description Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive Note: 1...
Datasheet PDF File MBR3530R PDF File

MBR3530R
MBR3530R

Overview
Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive Note: 1.
Standard polarity: Stud is cathode.
2.
Reverse polarity (R): Stud is anode.
3.
Stud is base.
MBR3520 thru MBR3540R VRRM = 20 V - 40 V IF = 35 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR3520(R) MBR3530(R) MBR3535(R) MBR3540(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 110 °C TC = 25 °C, tp = 8.
3 ms 20 14 20 35 600 -55 to 150 -55 to 150 30 21 30 35 600 -55 to 150 -55 to 150 35 25 35 35 600 -55 to 150 -55 to 150 40 28 40 35 600 -55 to 150 -55 to 150 Unit V V V A A °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Con...


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