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MBR6030

GeneSiC
Part Number MBR6030
Manufacturer GeneSiC
Description Silicon Power Schottky Diode
Published Jun 8, 2017
Detailed Description Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40V VRRM • Not ESD Sensitive Note: 1....
Datasheet PDF File MBR6030 PDF File

MBR6030
MBR6030

Overview
Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40V VRRM • Not ESD Sensitive Note: 1.
Standard polarity: Stud is cathode.
2.
Reverse polarity (R): Stud is anode.
3.
Stud is base.
MBR6020 thru MBR6040R VRRM = 20 V - 40 V IF = 60 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR6020 (R) MBR6030 (R) MBR6035 (R) MBR6040 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 100 °C TC = 25 °C, tp = 8.
3 ms 20 14 20 60 700 -55 to 150 -55 to 150 30 21 30 60 700 -55 to 150 -55 to 150 35 25 35 60 700 -55 to 150 -55 to 150 40 28 40 60 700 -55 to 150 -55 to 150 Unit V V V A A °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol ...


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