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MBR60020CT

GeneSiC
Part Number MBR60020CT
Manufacturer GeneSiC
Description Silicon Power Schottky Diode
Published Jun 27, 2019
Detailed Description Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive MBR600...
Datasheet PDF File MBR60020CT PDF File

MBR60020CT
MBR60020CT

Overview
Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive MBR60020CT thru MBR60040CTR VRRM = 20 V - 40 V IF(AV) = 600 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR60020CT(R) MBR60030CT(R) MBR60035CT(R) MBR60040CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 20 14 20 -55 to 150 -55 to 150 30 21 30 -55 to 150 -55 to 150 35 25 35 -55 to 150 -55 to 150 40 28 40 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MBR60020CT(R) MBR60030CT(R) MBR60035CT(R) MBR60040CT(R) Unit Average forward current (per pkg) Peak forward surge current (per leg) IF(AV) IFSM TC = 125 °C tp = 8.
3 ms, half sine Maximum forward voltage (per leg) VF Rev...


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