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MFE121

Digitron Semiconductors
Part Number MFE121
Manufacturer Digitron Semiconductors
Description DUAL GATE MOSFETS
Published Jun 12, 2017
Detailed Description MFE120-MFE122 High-reliability discrete products and engineering services since 1977 DUAL GATE MOSFETS FEATURES  Ava...
Datasheet PDF File MFE121 PDF File

MFE121
MFE121

Overview
MFE120-MFE122 High-reliability discrete products and engineering services since 1977 DUAL GATE MOSFETS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level.
Add “HR” suffix to base part number.
 Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS.
Rating Drain Source Voltage Drain Current Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VDS ID PD TJ, Tstg Value 25 30 300 1.
7 -65 to +175 Unit Vdc mAdc mW mW/°C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristics OFF CHARACTERISTICS Drain Source Breakdown Voltage (ID = 100 µAdc, VS = 0, VG1S = -4.
0 Vdc, VG2S = 4.
0V) Gate 1 – Source Breakdown Voltage (1) (IG1 = ±10 µAdc, VG2S = 0) Gate 2 – Source Breakdown Voltage (1) (IG2 = ±10 µAdc, VG2S = 0) Gate 1 Leakage Current (VG1S = ±6.
0 Vdc, VG2S = 0, VDS = 0) Gate 2 Leakage Current (VG2S = ...


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