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DF5G7M2N

Toshiba
Part Number DF5G7M2N
Manufacturer Toshiba
Description ESD Protection Diodes
Published Jun 16, 2017
Detailed Description ESD Protection Diodes Silicon Epitaxial Planar DF5G7M2N DF5G7M2N 1. Applications ESD Protection Note: This product is ...
Datasheet PDF File DF5G7M2N PDF File

DF5G7M2N
DF5G7M2N

Overview
ESD Protection Diodes Silicon Epitaxial Planar DF5G7M2N DF5G7M2N 1.
Applications ESD Protection Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation.
2.
Packaging and Internal Circuit DFN5 1 : I/O 1 2 : GND 3 : I/O 2 4 : I/O 3 5 : I/O 4 3.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Note Rating Unit Electrostatic discharge voltage (IEC61000-4-2)(Contact) VESD (Note 1) ±12 kV Electrostatic discharge voltage (IEC61000-4-2)(Air) ±15 Peak pulse power PPK 50 W Peak pulse current IPP (Note 2) 2.
5 A Junction temperature Storage temperature Tj 150  Tstg -55 to 150 Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the...


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