DatasheetsPDF.com

MFE990 Datasheet PDF


Part Number MFE990
Manufacturer Motorola
Title N-Channel TMOS FET
Description ...
Features ...

File Size 81.73KB
Datasheet MFE990 PDF File








Similar Ai Datasheet

MFE120 : MAXIMUM RATINGS Rating Drain-Source Voltage Drain Current @Total Device Dissipation T^ = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol vDs id Pd TJ' Tstg Value + 25 30 300 1.7 -65 to +175 Unit Vdc mAdc mW mW/°C °C MFE120 MFE121 MFE122 CASE 20-03, STYLE 9 TO-72 (TO-206AF) DUAL-GATE MOSFET VHF AMPLIFIER —N-CHANNEL DEPLETION ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted. Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (ID = 100 jtAdc, Vs = 0, Vqis = -4.0 V, Vq2S = + 4.0 V) Gate 1 -Source Breakdown Voltage G(I 1 = ±10/iAdc, VG 2S = 0) Gate 2-Source Breakdown Voltage G2(l = ±10nAdc, VG 2S = 0) Gate 1 Leakage Current (.

MFE120 : MFE120-MFE122 High-reliability discrete products and engineering services since 1977 DUAL GATE MOSFETS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS. Rating Drain Source Voltage Drain Current Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VDS ID PD TJ, Tstg Value 25 30 300 1.7 -65 to +175 Unit Vdc mAdc mW mW/°C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristics OFF CHARACTERISTICS Drain Source Breakdown Voltage (ID = 1.

MFE121 : MAXIMUM RATINGS Rating Drain-Source Voltage Drain Current @Total Device Dissipation T^ = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol vDs id Pd TJ' Tstg Value + 25 30 300 1.7 -65 to +175 Unit Vdc mAdc mW mW/°C °C MFE120 MFE121 MFE122 CASE 20-03, STYLE 9 TO-72 (TO-206AF) DUAL-GATE MOSFET VHF AMPLIFIER —N-CHANNEL DEPLETION ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted. Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (ID = 100 jtAdc, Vs = 0, Vqis = -4.0 V, Vq2S = + 4.0 V) Gate 1 -Source Breakdown Voltage G(I 1 = ±10/iAdc, VG 2S = 0) Gate 2-Source Breakdown Voltage G2(l = ±10nAdc, VG 2S = 0) Gate 1 Leakage Current (.

MFE121 : MFE120-MFE122 High-reliability discrete products and engineering services since 1977 DUAL GATE MOSFETS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS. Rating Drain Source Voltage Drain Current Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VDS ID PD TJ, Tstg Value 25 30 300 1.7 -65 to +175 Unit Vdc mAdc mW mW/°C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristics OFF CHARACTERISTICS Drain Source Breakdown Voltage (ID = 1.

MFE122 : MAXIMUM RATINGS Rating Drain-Source Voltage Drain Current @Total Device Dissipation T^ = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol vDs id Pd TJ' Tstg Value + 25 30 300 1.7 -65 to +175 Unit Vdc mAdc mW mW/°C °C MFE120 MFE121 MFE122 CASE 20-03, STYLE 9 TO-72 (TO-206AF) DUAL-GATE MOSFET VHF AMPLIFIER —N-CHANNEL DEPLETION ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted. Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (ID = 100 jtAdc, Vs = 0, Vqis = -4.0 V, Vq2S = + 4.0 V) Gate 1 -Source Breakdown Voltage G(I 1 = ±10/iAdc, VG 2S = 0) Gate 2-Source Breakdown Voltage G2(l = ±10nAdc, VG 2S = 0) Gate 1 Leakage Current (.

MFE122 : MFE120-MFE122 High-reliability discrete products and engineering services since 1977 DUAL GATE MOSFETS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS. Rating Drain Source Voltage Drain Current Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VDS ID PD TJ, Tstg Value 25 30 300 1.7 -65 to +175 Unit Vdc mAdc mW mW/°C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristics OFF CHARACTERISTICS Drain Source Breakdown Voltage (ID = 1.

MFE130 : .

MFE131 : .

MFE132 : .

MFE140 : .

MFE140 : MFE140 High-reliability discrete products and engineering services since 1977 DUAL GATE MOSFET FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS. Rating Drain-source voltage Gate-source voltage Drain current Gate current Total device dissipation @ TA = 25°C Derate above 25°C Operating and storage temperature range Symbol VDS VGS ID IG PD TJ, Tstg Value 25 ±7.0 30 10 300 -65 to 175 Unit Vdc Vdc mAdc mAdc mW °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTE.

MFE2000 : MFE2000 MFE2001 MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current Total Device Dissipation (a Tq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol vDs vDg Vgs id pd TJ. Tst g Value 25 25 -25 30 300 2.0 -65 to +175 Unit Vdc Vdc Vdc mAdc mW mW/°C DC ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic. OFF CHARACTERISTICS Gate-Source Breakdown Voltage dG = - 1.0 MAdc, V D s = 0) Gate Reverse Current (VGS = -20 Vdc, VDS = 0) (VGS = -20 Vdc, V D S = 0, TA = 150°C) Gate Source Cutoff Voltage (Iq = 0.5 mAdc, V D S = 15 Vdc) ON CHARACTERISTICS MFE2000 MFE2001 Zero-Gate-Voltage Drain Curr.

MFE2001 : MFE2000 MFE2001 MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current Total Device Dissipation (a Tq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol vDs vDg Vgs id pd TJ. Tst g Value 25 25 -25 30 300 2.0 -65 to +175 Unit Vdc Vdc Vdc mAdc mW mW/°C DC ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic. OFF CHARACTERISTICS Gate-Source Breakdown Voltage dG = - 1.0 MAdc, V D s = 0) Gate Reverse Current (VGS = -20 Vdc, VDS = 0) (VGS = -20 Vdc, V D S = 0, TA = 150°C) Gate Source Cutoff Voltage (Iq = 0.5 mAdc, V D S = 15 Vdc) ON CHARACTERISTICS MFE2000 MFE2001 Zero-Gate-Voltage Drain Curr.

MFE2004 : MFE2004 MFE2005 MFE2006 CASE 22-03, STYLE 4 TO-18 (TO-206AA) JFET CHOPPER —N-CHANNEL DEPLETION Refer to 2N4091 for graphs. MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Total Device Dissipation (d Jq = 25°C Derate above 25°C Junction Temperature Range Storage Temperature Range Symbol vDs Vdg vgs "GF PD Tj Tstg Value 30 30 30 10 1.8 10 -65 to +175 - 65 to + 200 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.: Characteristic OFF CHARACTERISTICS Gate-Source Breakdown Voltage G(l = 1.0/nAdc. V D S = 0) Gate Reverse Current (V GS = 20 Vdc, V D s = 0) (Vqs = 20 Vdc, V DS = 0, TA =.

MFE2005 : MFE2004 MFE2005 MFE2006 CASE 22-03, STYLE 4 TO-18 (TO-206AA) JFET CHOPPER —N-CHANNEL DEPLETION Refer to 2N4091 for graphs. MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Total Device Dissipation (d Jq = 25°C Derate above 25°C Junction Temperature Range Storage Temperature Range Symbol vDs Vdg vgs "GF PD Tj Tstg Value 30 30 30 10 1.8 10 -65 to +175 - 65 to + 200 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.: Characteristic OFF CHARACTERISTICS Gate-Source Breakdown Voltage G(l = 1.0/nAdc. V D S = 0) Gate Reverse Current (V GS = 20 Vdc, V D s = 0) (Vqs = 20 Vdc, V DS = 0, TA =.

MFE2006 : MFE2004 MFE2005 MFE2006 CASE 22-03, STYLE 4 TO-18 (TO-206AA) JFET CHOPPER —N-CHANNEL DEPLETION Refer to 2N4091 for graphs. MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Total Device Dissipation (d Jq = 25°C Derate above 25°C Junction Temperature Range Storage Temperature Range Symbol vDs Vdg vgs "GF PD Tj Tstg Value 30 30 30 10 1.8 10 -65 to +175 - 65 to + 200 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.: Characteristic OFF CHARACTERISTICS Gate-Source Breakdown Voltage G(l = 1.0/nAdc. V D S = 0) Gate Reverse Current (V GS = 20 Vdc, V D s = 0) (Vqs = 20 Vdc, V DS = 0, TA =.

MFE201 : .




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)