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2N1132


Part Number 2N1132
Manufacturer Motorola
Title SWITCHING TRANSISTOR
Description MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage (R BE « 10 Ohms) Collector-Base Voltage Emitter-Base Voltage —Collector...
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2N1131 : 2N1131 (SILl.CON) 2N1131JAN AVAILABLE 2Nl131A 2N1991 PNP SILICON ANNULAR TRANSISTORS · .. designed for medium-speed switching and amplifier applications where low DC current gain is essential. • Low DC Current Gain - hFE =45 (Max) @ IC = 150 mAdc - 2N1131,A • Turn-On Time - ton = 45 ns (Max) - 2N 1131A • Turn-Off Time - toff = 35 ns (Max) - 2N1131A *MAXIMUM RATINGS Rating Symbol Cpllector·Emitter Voltage Collector·Emitter Voltage Collector·Ba•• Voltage Emitter·Base Voltage Collector Current - Continuous Total Device Dissipation@TA==2SoC Derate above 250 e Total Device Dissipation@Te= 250 e @TC=I000C Derate above 25°C VeEO VeER VeB VEB Ie Po Po Operating Junction Temperature Range Stor.

2N1131 : TECHNICAL DATA LOW POWER PNP SILICON TRANSISTOR Qualified per MIL-PRF-19500/177 Devices 2N1131 2N1131L 2N1132 2N1132L Qualified Level JAN JANTX TO-39* MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC PT Top, Tj All Units 40 50 5.0 600 0.6 2.0 -65 to +200 Units Vdc Vdc Vdc mAdc W W °C @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Temperature Range 1) Derate linearly 3.4 mW/0C for TA ≥ +250C 2) Derate linearly 11.4 mW/0C for TC ≥ +250C 2N1131, 2N1132 TO-5* 2N1311L, 2N1312L *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted).

2N1131 : The CENTRAL SEMICONDUCTOR 2N1131 is a silicon PNP transistor mounted in a hermetically sealed package designed for medium current switching applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage (RBE=10Ω) VCER Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation (TC=25°C) PD Power Dissipation PD Operating and Storage Junction Temperature TJ, Tstg 50 50 35 5.0 0.6 2.0 0.6 -65 to +200 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=30V ICBO VCB=30V, TA=150°C I.

2N1131A : 2N1131 (SILl.CON) 2N1131JAN AVAILABLE 2Nl131A 2N1991 PNP SILICON ANNULAR TRANSISTORS · .. designed for medium-speed switching and amplifier applications where low DC current gain is essential. • Low DC Current Gain - hFE =45 (Max) @ IC = 150 mAdc - 2N1131,A • Turn-On Time - ton = 45 ns (Max) - 2N 1131A • Turn-Off Time - toff = 35 ns (Max) - 2N1131A *MAXIMUM RATINGS Rating Symbol Cpllector·Emitter Voltage Collector·Emitter Voltage Collector·Ba•• Voltage Emitter·Base Voltage Collector Current - Continuous Total Device Dissipation@TA==2SoC Derate above 250 e Total Device Dissipation@Te= 250 e @TC=I000C Derate above 25°C VeEO VeER VeB VEB Ie Po Po Operating Junction Temperature Range Stor.

2N1131L : TECHNICAL DATA LOW POWER PNP SILICON TRANSISTOR Qualified per MIL-PRF-19500/177 Devices 2N1131 2N1131L 2N1132 2N1132L Qualified Level JAN JANTX TO-39* MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC PT Top, Tj All Units 40 50 5.0 600 0.6 2.0 -65 to +200 Units Vdc Vdc Vdc mAdc W W °C @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Temperature Range 1) Derate linearly 3.4 mW/0C for TA ≥ +250C 2) Derate linearly 11.4 mW/0C for TC ≥ +250C 2N1131, 2N1132 TO-5* 2N1311L, 2N1312L *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted).

2N1132 : TECHNICAL DATA LOW POWER PNP SILICON TRANSISTOR Qualified per MIL-PRF-19500/177 Devices 2N1131 2N1131L 2N1132 2N1132L Qualified Level JAN JANTX TO-39* MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC PT Top, Tj All Units 40 50 5.0 600 0.6 2.0 -65 to +200 Units Vdc Vdc Vdc mAdc W W °C @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Temperature Range 1) Derate linearly 3.4 mW/0C for TA ≥ +250C 2) Derate linearly 11.4 mW/0C for TC ≥ +250C 2N1131, 2N1132 TO-5* 2N1311L, 2N1312L *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted).

2N1132 : SILICON PLANAR PNP TRANSISTOR 2N1132 • High Speed Switching • Hermetic TO-39 Metal package. • Ideally suited for Small Signal General Purpose and Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage -50V VCEO Collector – Emitter Voltage -40V VEBO Emitter – Base Voltage -5V IC Continuous Collector Current -600mA PD Total Power Dissipation at TA = 25°C 600mW Derate Above 25°C 3.4mW/°C PD Total Power Dissipation at TC = 25°C 2W Derate Above 25°C 11.4mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameter.

2N1132A : MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage (R BE « 10 Ohms) Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation (a Ta = 25°C Derate above 25°C Total Device Dissipation (a Tq = 25°C Derate above 25°C Total Device Dissipation (a 1q = 100°C 2N1132A Operating and Storage Junction Temperature Range Symbol vCEO VCER 2N1132 2N1132A 35 40 50 * Unit Vdc Vdc vCBO v EBO "C PD Pd pd 50 60 | 5.0 600 600 * 3.43 2.0 « 11.43 1.0 Vdc Vdc mA mW mW/°C Watts mW/t Watts TJ- Tstg -65 to +200 °C 2N1132 A r JAN AVAILABLE CASE 79-02, STYLE 1 TO-39 (TO-205AD) SWITCHING TRANSISTOR PNP SILICON THERMAL CHARACT.

2N1132L : TECHNICAL DATA LOW POWER PNP SILICON TRANSISTOR Qualified per MIL-PRF-19500/177 Devices 2N1131 2N1131L 2N1132 2N1132L Qualified Level JAN JANTX TO-39* MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC PT Top, Tj All Units 40 50 5.0 600 0.6 2.0 -65 to +200 Units Vdc Vdc Vdc mAdc W W °C @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Temperature Range 1) Derate linearly 3.4 mW/0C for TA ≥ +250C 2) Derate linearly 11.4 mW/0C for TC ≥ +250C 2N1131, 2N1132 TO-5* 2N1311L, 2N1312L *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted).




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