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2N1120

Motorola
Part Number 2N1120
Manufacturer Motorola
Description PNP germanium power transistor
Published Nov 8, 2018
Detailed Description 11202N (GERMANIUM) PNP germanium power transistor for military and industrial power applications. MAXIMUM RATINGS Rati...
Datasheet PDF File 2N1120 PDF File

2N1120
2N1120


Overview
11202N (GERMANIUM) PNP germanium power transistor for military and industrial power applications.
MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Emitter Current Total Device Dissipation @ TC = 250 C Derate above 250 C Operating Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol VCEO VCES VCB VEB IE PD TJ 2N1120 40 70 80 40 15 90 1.
2 -65 to +100 Unit Vdc Vdc Vdc Vdc Adc Watts W!oC °c Symbol (}JC Max 0.
8 Unit °C!W POWER·TEMPERATURE DERATING CURVE 100 90 ~~ '" 80 .
§ -:;j 60 .
So i.
''s.
"".
40 Q) "p0.
, p.
,A 20 10 o o """ " ~ ~", "- "- """20 40 60 80 TC' Case Temperature (oC) 100 2-160 2N1120 (continued) ELECTRICAL CHARACTERISTICS (Te = 250 e unless otherwise noted) Characteristic Symbol Min OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 300 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 300 mAdc, VBE = 0...


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