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2N2102

Multicomp
Part Number 2N2102
Manufacturer Multicomp
Description Transistor
Published Jun 18, 2017
Detailed Description Transistor Description: This is a Silicon NPN transistor in a TO-39 type case designed primarily for amplifier and swit...
Datasheet PDF File 2N2102 PDF File

2N2102
2N2102


Overview
Transistor Description: This is a Silicon NPN transistor in a TO-39 type case designed primarily for amplifier and switching applications.
This device features high breakdown voltage low leakage current, low capacity, and beta useful over an extremely wide current range.
Absolute Maximum Ratings: Collector-Base Voltage, Vcbo : 120V Collector-Emitter Voltage, Vceo : 65V Emitter-Base Voltage, Vebo : 7V Continuous Collector Current, Ic : 1A Total Device Dissipation (Ta = +25ºC), Pd : 800mW Derate above 25ºC : 4.
6mW/ºC Total Device Dissipation (Tc = + 25ºC), Pd : 5W Derate above 25ºC : 28.
6mW/ºC Operating Junction Temperature Range, Tj : -65ºC to +200ºC Storage Temperature Range, Tstg : -65ºC to 200ºC Thermal Resistance, Junction-to-Case, Rthjc : 35ºC/W Thermal Resistance, Junction-to-Ambient, Rthja : 175ºC/W Lead Temperature (During Soldering, 1/16" from case, 60sec max), Tl : 300ºC Electrical Characteristics: (Ta = +25ºC Unless otherwise specifie...



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