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2N2422B


Part Number 2N2422B
Manufacturer Digitron Semiconductors
Title SILICON UNIJUNCTION TRANSISTOR
Description DIGITRON SEMICONDUCTORS 2N2417 - 2N2422, A, B SILICON UNIJUNCTION TRANSISTOR MAXIMUM RATINGS Rating Symbol Value Power dissipation(1) PD 3...
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2N2422 : DIGITRON SEMICONDUCTORS 2N2417 - 2N2422, A, B SILICON UNIJUNCTION TRANSISTOR MAXIMUM RATINGS Rating Symbol Value Power dissipation(1) PD 350 RMS emitter current IE 70 Peak pulse emitter current (2) ie 2 Emitter reverse voltage VB2E 60 Interbase voltage VB2B1 65 Operating junction temperature range TJ -65 to 175 Storage temperature range Tstg -65 to 175 Note 1: Derate 2.33mW/°C increase in ambient temperature. The total power dissipation must be limited by the external circuitry. Note 2: Capacitor discharge – 10µF or less, 30 volts or less. Unit mW mA Amps Volts Volts °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Intrinsic standoff.

2N2422A : DIGITRON SEMICONDUCTORS 2N2417 - 2N2422, A, B SILICON UNIJUNCTION TRANSISTOR MAXIMUM RATINGS Rating Symbol Value Power dissipation(1) PD 350 RMS emitter current IE 70 Peak pulse emitter current (2) ie 2 Emitter reverse voltage VB2E 60 Interbase voltage VB2B1 65 Operating junction temperature range TJ -65 to 175 Storage temperature range Tstg -65 to 175 Note 1: Derate 2.33mW/°C increase in ambient temperature. The total power dissipation must be limited by the external circuitry. Note 2: Capacitor discharge – 10µF or less, 30 volts or less. Unit mW mA Amps Volts Volts °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Intrinsic standoff.




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