DatasheetsPDF.com

VS-20ETF12PbF

Vishay
Part Number VS-20ETF12PbF
Manufacturer Vishay
Description Fast Soft Recovery Rectifier Diode
Published Jun 21, 2017
Detailed Description www.vishay.com VS-20ETF...-M3 Series Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 20 A 2 Base cathode ...
Datasheet PDF File VS-20ETF12PbF PDF File

VS-20ETF12PbF
VS-20ETF12PbF


Overview
www.
vishay.
com VS-20ETF.
.
.
-M3 Series Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 20 A 2 Base cathode 2 1 3 2L TO-220AC 1 3 Cathode Anode PRIMARY CHARACTERISTICS IF(AV) VR VF at IF IFSM trr TJ max.
Snap factor 20 A 800 V, 1000 V, 1200 V 1.
31 V 320 A 95 ns 150 °C 0.
6 Package 2L TO-220AC Circuit configuration Single FEATURES • Glass passivated pellet chip junction • 150 °C max operating junction temperature • Low forward voltage drop and short reverse recovery time • Designed and qualified according to JEDEC®-JESD 47 • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 APPLICATIONS These devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on conducted EMI should be met.
DESCRIPTION The VS-20ETF.
.
.
fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop.
 The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VRRM IF(AV) IFSM trr VF TJ Sinusoidal waveform 1 A, 100 A/μs 20 A, TJ = 25 °C Range VOLTAGE RATINGS PART NUMBER VS-20ETF08-M3 VS-20ETF10-M3 VS-20ETF12-M3 VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 800 1000 1200 VALUES 800 to 1200 20 320 95 1.
31 -40 to +150 UNITS V A ns V °C VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 900 1100 1300 IRRM AT 150 °C mA 6 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current IF(AV) Maximum peak one cycle non-repetitive surge current IFSM Maximum I2t for fusing I2t Maximum I2t for fusing I2t TEST CONDITIONS TC = 113 °C, 180° conduction half sine wave 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.
1 ms to 10 ms, ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)