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MMBD2836

JR
Part Number MMBD2836
Manufacturer JR
Description Silicon Epitaxial Planar Switching Diode
Published Jun 23, 2017
Detailed Description Silicon Epitaxial Planar Switching Diode MMBD2835, MMBD2836 Features • Small package • Low forward voltage • Fast reve...
Datasheet PDF File MMBD2836 PDF File

MMBD2836
MMBD2836

Overview
Silicon Epitaxial Planar Switching Diode MMBD2835, MMBD2836 Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance Applications • Ultra high speed switching application Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Forward Current Power Dissipation Junction Temperature Storage Temperature Range 3 12 Marking Code: A1 SOT-23 Plastic Package MMBD2835 MMBD2836 Symbol VR IF Ptot Tj Tstg Value 35 75 100 350 150 - 55 to + 150 Unit V mA mW OC OC Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 10 mA at IF = 50 mA at IF = 100 mA Reverse Current at VR = 30 V at VR = 50 V Reverse Breakdown Voltage at IR = 100 µA Diode Capacitance at VR = 0 , f = 1 MHz Reverse Recovery Time at IF = IR = 10 mA, IR(REC) = 1 mA Symbol MMBD2835 MMBD2836 VF VF VF IR MMBD2835 MMBD2836 V(BR)R CT trr Min.
- - 35 75 - - Max.
1 1 1.
2 100 100 - 4 4 Unit V V V nA V pF ns ShangHai JR Electronics.
CO.
,LTD.
http://www.
j...


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