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MMBD6050

CHINA BASE
Part Number MMBD6050
Manufacturer CHINA BASE
Description Silicon Epitaxial Planar Switching Diode
Published Jun 23, 2017
Detailed Description MMBD6050 Silicon Epitaxial Planar Switching Diode Features • Small package • Low forward voltage • Fast reverse recover...
Datasheet PDF File MMBD6050 PDF File

MMBD6050
MMBD6050

Overview
MMBD6050 Silicon Epitaxial Planar Switching Diode Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance Applications • Ultra high speed switching application 3 12 Marking Code: 5D SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Forward Current Non-repetitive Peak Forward Surge Current (t = 1 μs) Power Dissipation Junction Temperature Storage Temperature Range Symbol VR IF IFSM Ptot Tj Tstg Value 70 200 4 350 150 - 55 to + 150 Unit V mA A mW OC OC Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA at IF = 100 mA Reverse Current at VR = 50 V Reverse Breakdown Voltage at IR = 100 µA Diode Capacitance at VR = 0, f = 1 MHz Reverse Recovery Time at IF = IR = 10 mA, IR(REC) = 1 mA Symbol VF IR V(BR)R CT trr Min.
0.
55 0.
85 - 70 - - Max.
0.
7 1.
1 100 - 2.
5 4 Unit V nA V pF ns Page 1 of 3 6/3/2011 Page 2 of 3 6/3/2011 PACKAGE OUTLINE Plastic surface mounted packag...


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