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2N3114CSM

TT
Part Number 2N3114CSM
Manufacturer TT
Description SILICON PLANAR EPITAXIAL NPN TRANSISTOR
Published Jun 24, 2017
Detailed Description SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3114CSM • High Voltage • Hermetic Ceramic Surface Mount Package • Designed Fo...
Datasheet PDF File 2N3114CSM PDF File

2N3114CSM
2N3114CSM

Overview
SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3114CSM • High Voltage • Hermetic Ceramic Surface Mount Package • Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 150V VCEO Collector – Emitter Voltage 150V VEBO Emitter – Base Voltage 5V IC Continuous Collector Current 150mA PD Total Power Dissipation at TA = 25°C 350mW Derate Above 25°C 2mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient Min.
Typ.
Max.
Units 500 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press.
However Se...


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